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MA3075WALT1
Preferred Device
Zener Transient Voltage Suppressor
SOT-23 Dual Common Anode Zeners for ESD Protection
These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Specification Features: http://onsemi.com
PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2
* SOT-23 Package Allows Two Separate Unidirectional * * * * * * * *
Configurations Low Leakage < 1 mA @ 5 Volt Breakdown Voltage: 7.2-7.9 Volt @ 5 mA Low Capacitance (80 pF typical @ 0 Volts, 1 MHz) ESD Protection Meeting: 16 kV Human Body Model ESD Protection Meeting: 30 kV Air and Contact Discharge Void Free, Transfer-Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications
1 2
3
MARKING DIAGRAM
7W5
SOT-23 CASE 318 STYLE 12
M = Date Code
Mechanical Characteristics:
ORDERING INFORMATION
Device MA3075WALT1 Package SOT-23 Shipping 3000/Tape & Reel
MAXIMUM RATINGS
Rating Peak Power Dissipation @ 100 s (Note 1) Steady State Power Dissipation Derate above 25C (Note 2) Thermal Resistance Junction to Ambient Maximum Junction Temperature Operating Junction and Storage Temperature Range ESD Discharge MIL STD 883C - Method 3015-6 IEC61000-4-2, Air Discharge IEC61000-4-2, Contact Discharge Symbol Ppk PD Value 15 Unit Watts mW mW/C C/W C/W C kV 16 30 30
Preferred devices are recommended choices for future use and best overall value.
225 1.8 556 417 - 55 to +150
RJA RJA TJ, Tstg VPP
1. Non-repetitive 100 ms pulse width 2. Mounted on FR-5 Board = 1.0 X 0.75 X 0.062 in.
(c) Semiconductor Components Industries, LLC, 2002
1
January, 2002 - Rev. 1
Publication Order Number: MA3075WALT1/D
M
MA3075WALT1
I IF
VC VBR VRWM IR VF IT
V
IPP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS
Parameter Forward Voltage Zener Voltage*2 Operating Resistance Symbol VF VZ RZK RZ Reverse Current IR1 IR2 Temperature Coefficient of Zener Voltage*3 Terminal Capacitance SZ Ct Conditions IF = 10 mA IZ = 5 mA IZ = 0.5 mA IZ = 5 mA VR = 5 V VR = 6.5 V IZ = 5 mA VR = 0 V 2.5 4.0 80 6 7.2 Min Typ 0.8 7.5 Max 0.9 7.9 120 15 1 60 5.3 Unit V V mA mA mV/C pF
300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 25 50 75 100 125 TEMPERATURE (C) 150 175 % OF PEAK PULSE CURRENT
100 90 80 70 60 50 40 30 20 10 0 0 tp tr
PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms
20
40 t, TIME (ms)
60
80
Figure 1. Steady State Power Derating Curve
Figure 2. 8 X 20 ms Pulse Waveform
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MA3075WALT1
1000 IF, FORWARD CURRENT (mA) 100 TA = 85C -40C
PPK, PEAK POWER (W)
10
100
25C 1
10
0.1
1 10 100 tp, PULSE WIDTH (ms) 1000
0.01 0 0.2 0.8 0.4 0.6 VF, FORWARD VOLTAGE (V) 1 1.2
Figure 3. Pulse Rating Curve
Figure 4. Forward Current versus Forward Voltage
1000 IR, LEAKAGE CURRENT (nA)
1.2 VF, FORWARD VOLTAGE (V) 1 IF = 100 mA 0.8 3 mA 0.6 10 mA 0.4 0.2 0 -60
100
TA = 85C -40C
10 25C 1
0.1
0.01 -40 20 -20 0 40 60 TA, AMBIENT TEMPERATURE (C) 80 100 0 1 4 5 2 3 6 VR, REVERSE VOLTAGE (V) 7 8
Figure 5. Forward Voltage versus Temperature
Figure 6. Leakage Current versus Reverse Voltage
100
1000 IR, LEAKAGE CURRENT (nA) VR = 6 V IZ, ZENER CURRENT (mA) 100 VR = 5 V 10
TA = -40C 10
85C
25C 1
0.1
1 VR = 1 V 0.1 -60
0.01
0.001 -40 -20 0 20 40 60 TA, AMBIENT TEMPERATURE (C) 80 100 5.5 6 7 7.5 6.5 VZ, ZENER VOLTAGE (V) 8 8.5
Figure 7. Leakage Current versus Temperature
Figure 8. Zener Current versus Zener Voltage
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MA3075WALT1
90 80 Cd, CAPACITANCE (pF) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) 7 8 f = 1 MHz TA = 25C 100 RZ, OPERATING RESISTANCE (W)
10
1
0.1 0.1 10 1 IZ, ZENER CURRENT (mA) 100
Figure 9. Capacitance
Figure 10. Operating Resistance versus Zener Current
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MA3075WALT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C = 225 milliwatts 556C/W
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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MA3075WALT1
Transient Voltage Suppressors - Surface Mount
SOT-23 TO-236AB CASE 318-08 ISSUE AF
A L
3 1 2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
BS
V
G C D H K J
STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE
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MA3075WALT1
Notes
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MA3075WALT1
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MA3075WALT1/D

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